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* Non minimal adaptive routing can have livelocks | * Non minimal adaptive routing can have livelocks | ||
+ | ===== Lecture 32 (4/30 Wed.) ===== | ||
+ | |||
+ | |||
+ | * Serialized code section | ||
+ | * Degrade performance | ||
+ | * Waste energy | ||
+ | * Heterogeneous cores | ||
+ | * Can execute serialized portion on a powerful large core | ||
+ | * Tradeoff between multiple small cores, multiple large cores or heterogenerous cores | ||
+ | * Critical section | ||
+ | * bottleneck in several multithreaded workloads | ||
+ | * Assymmetry can help | ||
+ | * Accelerated critical section | ||
+ | * Use a large core to run serialized portion of the code | ||
+ | * How to correctly support ACS | ||
+ | * False serialization | ||
+ | * Handling private/shared data | ||
+ | * BIS | ||
+ | * Ideltify the bottleneck | ||
+ | * Serial bottleneck | ||
+ | * Barrier | ||
+ | * Critical section | ||
+ | * Pipeline stages | ||
+ | * Application might wait on different types of bottlenecks | ||
+ | * Allow bottleneckcall and bottleneckreturn | ||
+ | * Acceleration can be done in multiple ways | ||
+ | * ship to a big core | ||
+ | * increase the frequency | ||
+ | * Priorize the thread in share resources (memory scheduler always schedule reqeusts from the thread first, etc.) | ||
+ | * Bottleneck table keeps track of different thread's bottleneck and determine the criticality | ||
| | ||
+ | |||
+ | ===== Lecture 33 (5/2 Fri.) ===== | ||
+ | |||
+ | |||
+ | * DRAM scaling problem | ||
+ | * Possible solutions to the scaling problem | ||
+ | * Less leakage DRAM | ||
+ | * Heterogeneous DRAM (TL-DRAM, etc.) | ||
+ | * Add more functionality to DRAM | ||
+ | * Denser design (3D stack) | ||
+ | * Different technology | ||
+ | * NVM | ||
+ | * Non volatile memory | ||
+ | * Resistive memory | ||
+ | * PCM | ||
+ | * Inject current to change the phase | ||
+ | * Scales better than DRAM | ||
+ | * Multiple bits per cell | ||
+ | * Wider resistence range | ||
+ | * No refresh is needed | ||
+ | * Downside: Latency and write endurance | ||
+ | * STT-MRAM | ||
+ | * Inject current to change the polarity | ||
+ | * Memristor | ||
+ | * Inject current to change the structure | ||
+ | * Persistency - data stay there even without power | ||
+ | * Unified memory and storage management (persistent data structure) - Single level store | ||
+ | * Improve energy and performance | ||
+ | * Simplify programming model | ||